Pixelated capacitance controlled esc

ABSTRACT

Implementations described herein provide a pixilated electrostatic chuck which enables both lateral and azimuthal tuning of the RF coupling between an electrostatic chuck and a substrate placed thereon. In one embodiment, the pixilated electrostatic chuck (ESC) may include a dielectric body having a workpiece support surface configured to accept a substrate thereon, one or more chucking electrodes disposed in the pixilated ESC, and a plurality of pixel electrodes. The plurality of pixel electrodes are switchable between a floating state and a grounded state, having variable capacitance to ground, or both. The pixel electrodes and the chucking electrodes form a circuit operable to electrostatically chuck the substrate to the workpiece support surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Application Ser. No.61/984,519, filed Mar. 5, 2014 (Attorney Docket No. APPM/021625USL), ofwhich is incorporated by reference in its entirety.

BACKGROUND

1. Field

Implementations described herein generally relate to semiconductormanufacturing and more particularly to an electrostatic chuck and amethod of using the same.

2. Description of the Related Art

As the feature size of the device patterns get smaller, the criticaldimension (CD) requirements of these features become a more importantcriterion for stable and repeatable device performance. Allowable CDvariation across a substrate processed within a processing chamber isdifficult to achieve due to chamber asymmetries such as chamber andsubstrate temperature, flow conductance, and RF fields.

In processes utilizing an electrostatic chuck, uniformity of etchingacross the surface of the substrate is challenging due to thenon-homogeneous construction of the chuck below the substrate. Forexample, some regions of the electrostatic chuck have gas holes, whileother regions have lift pin holes that are laterally offset from the gasholes. Still other regions have chucking electrodes, while other regionshave heater electrodes that are laterally offset from the chuckingelectrodes. The non-homogeneous construction of the chuck leads tonon-uniformity of the radio frequency (RF) fields which directly affectthe etching across the surface of the substrate.

The structure of the electrostatic chuck can vary both laterally andazimuthally, uniformity of the RF field between the chuck and substrateis complicated and very difficult to obtain, resulting in localvariability in the RF field across the chuck surface. Plasma basedprocesses can be very sensitive to small local RF coupling variations tothe electrostatic chuck. Thus, the local RF coupling variations resultin non-uniformity of the processing results along the surface of thesubstrate.

Thus, there is a need for an improved electrostatic chuck.

SUMMARY

Implementations described herein provide a pixilated electrostatic chuckwhich enables both lateral and azimuthal tuning of the RF couplingbetween an electrostatic chuck and a substrate placed thereon. In oneembodiment, the pixilated electrostatic chuck (ESC) may include adielectric body having a workpiece support surface configured to accepta substrate thereon, one or more chucking electrodes disposed in thepixilated ESC, and a plurality of pixel electrodes. The plurality ofpixel electrodes are switchable between a floating state and a groundedstate, having variable capacitance to ground, or both. The pixelelectrodes and the chucking electrodes form a circuit operable toelectrostatically chuck the substrate to the workpiece support surface.

In another embodiment, a processing chamber is provided. The processingchamber includes chamber body having a pixilated electrostatic chuck(ESC) disposed therein. The pixilated ESC may be configured as describedabove.

In yet another embodiment, a method for processing a substrate isprovided that includes applying power to a main chucking electrodeformed in a pixilated electrostatic chuck, selectively coupling one ormore of a plurality of pixel electrodes distributed laterally within thepixilated electrostatic chuck to ground to secure a substrate to thepixilated electrostatic chuck, and processing the substrate on thepixilated electrostatic chuck.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toimplementations, some of which are illustrated in the appended drawings.It is to be noted, however, that the appended drawings illustrate onlytypical implementations of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective implementations.

FIG. 1 is a cross-sectional schematic side view of a processing chamberhaving one embodiment of a pixilated electrostatic chuck;

FIG. 2 is a partial cross-sectional schematic side view detailingportions of the pixilated electrostatic chuck and substrate supportassembly;

FIG. 3 is a partial top plan view depicting a layout for adjustablecapacitors and electrodes in the pixilated electrostatic chuck;

FIG. 4 is a cross-sectional views taken along the section line A-A ofFIG. 3, illustrating a simplified wiring schematic for capacitors in thepixilated electrostatic chuck;

FIG. 5 is a partial wiring schematic illustrating RF variablecapacitors; and

FIG. 6 is a flow diagram of one embodiment for processing a substrateutilizing a pixilated electrostatic chuck.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneimplementation may be beneficially used in other implementations withoutspecific recitation.

DETAILED DESCRIPTION

As the semiconductor industry is reducing the electronic feature sizesto sub-nm levels, the etch rate and CD uniformity requirements are alsoshrinking to Angstrom levels which is nearing atomic sizes. In suchcases, substrate temperatures must either be very uniform, for exampleless than about 0.5° Celsius for nodes smaller than 20 nm, or tunablewith a very fine resolution to tailor the process uniformity acrosssubstrates. However, for semiconductor technology nodes smaller than 10nm, even temperature uniformity as low as 0.25° Celsius or less is notsufficient to maintain process uniformity. One factor effecting processuniformity is the dielectric depth of the chucking electrode within thepuck of the electrostatic chuck. The dielectric depth is a distancebetween the top of the puck and the high voltage grid comprising thechucking electrode. The topography of the puck's substrate supportsurface and dielectric depth both significantly influence RF coupling ofa substrate to the ESC. Stronger coupling of the radio frequency (RF) tothe substrate can increase the etch rate and vice versa. Thus,controlling the local capacitance of the workpiece to ground laterallyacross an ESC is an important process control parameter which theinvention disclosed herein has been demonstrated as effective processcontrol attribute for tailoring the lateral and/or azimuthal etch rateuniformity and/or CD control of processes performed using an ESC.

Implementations described herein provide a pixilated electrostatic chuck(ESC) which enables local, lateral and azimuthal tuning of the RFcoupling of the pixilated ESC and a workpiece, such as a substrate,which in turn, allows both lateral and azimuthal tuning of the lateralRF coupling of the substrate, on the pixilated ESC, to the ground.Moreover, the control of local variations in the capacitance in thepixilated ESC, for coupling of the substrate to the ground,substantially enhances the processes performed thereon by eliminatingor, in some cases, inducing process variations influenced by the RFcoupling. Thus, the pixilated ESC enables angstrom-level etch rate &critical dimension (CD) uniformity control between almost any locationsacross the substrate. Methods for tuning the RF coupling for a substrateprocessed on a pixilated ESC are also described herein. Although thepixilated ESC is described below in an etch processing chamber, thepixilated ESC may be utilized in other types of plasma processingchambers, such as physical vapor deposition chambers, chemical vapordeposition chambers, ion implantation chambers, among others, and othersystems where at least one of azimuthal, lateral and/or local tuning ofa RF profile across the substrate support surface of the ESC isdesirable. It is also contemplated that the pixilated electrodes mayalso be utilized to control the RF bias or coupling of other surfaces,including those not used for semiconductor processing.

In one or more embodiments, the pixilated ESC allows for the correctionof critical dimension (CD) variation at the edge or other locationsacross the substrate during a vacuum process, such as etching,deposition, implantation and the like, by utilizing the pixel electrodesto compensate for chamber non-uniformities, such as temperature, flowconductance, electrical fields, plasma density and the like.Additionally, some embodiments have demonstrated the ability to controlthe capacitance of the substrate to the ground anywhere from about 20 pFto about several hundred pF.

FIG. 1 is a cross-sectional schematic view of an exemplary etchprocessing chamber 100 having a pixilated ESC 132. As discussed above,the pixilated ESC 132 may be utilized in other processing chamber, forexample plasma treatment chambers, annealing chambers, physical vapordeposition chambers, chemical vapor deposition chambers, and ionimplantation chambers, among others, as well as other systems where theability to control a RF profile coupling a surface or workpiece, such asa substrate, to a ground is desirable. Independent and local control ofthe RF coupling across many discrete regions of a surface (i.e., thesubstrate support surface of the pixilated ESC 132) beneficially enableslateral and/or azimuthal tuning of the RF profile and reduction of localRF asperities, such as high or low RF coupling, which may affect localprocess results in the etch processing chamber 100.

The processing chamber 100 includes a grounded chamber body 102. Thechamber body 102 includes walls 104, a bottom 106 and a lid 108 whichenclose an internal volume 124. A substrate support assembly 126 isdisposed in the internal volume 124. The pixilated ESC 132 is disposedon the substrate support assembly 126 and supports a substrate 134thereon during processing.

The walls 104 of the processing chamber 100 include an opening (notshown) through which the substrate 134 may be robotically transferredinto and out of the internal volume 124. A pumping port 110 is formed inone of the walls 104 or the bottom 106 of the chamber body 102 and isfluidly connected to a pumping system (not shown). The pumping system isutilized to maintain a vacuum environment within the internal volume 124of the processing chamber 100, while removing processing byproducts.

A gas panel 112 provides process and/or other gases to the internalvolume 124 of the processing chamber 100 through one or more inlet ports114 formed through at least one of the lid 108 or walls 104 of thechamber body 102. The process gas provided by the gas panel 112 areenergized within the internal volume 124 to form a plasma 122 utilizedto process the substrate 134 disposed on the pixilated ESC 132. Theprocess gases may be energized by RF power inductively coupled to theprocess gases from a plasma applicator 120 positioned outside thechamber body 102. In the embodiment depicted in FIG. 1, the plasmaapplicator 120 is a pair of coaxial coils coupled through a matchingcircuit 118 to an RF power source 116 or a capacitively coupled plasma(CCP) chamber.

A controller 148 is coupled to the processing chamber 100 to controloperation of the processing chamber 100 and processing of the substrate134. The controller 148 may be one of any form of general-purpose dataprocessing system that can be used in an industrial setting forcontrolling the various subprocessors and subcontrollers. Generally, thecontroller 148 includes a central processing unit (CPU) 172 incommunication with memory 174 and input/output (I/O) circuitry 176,among other common components. Software commands executed by the CPU ofthe controller 148, cause the processing chamber to, for example,introduce an etchant gas mixture (i.e., processing gas) into theinternal volume 124, form the plasma 122 from the processing gas byapplication of RF power from the plasma applicator 120, and etch a layerof material present on the substrate 134.

The substrate support assembly 126 generally includes at least asubstrate support. In the embodiment of FIG. 1, the substrate support isan electrostatic chuck and will be described hereinafter as thepixilated ESC 132. The substrate support assembly 126 may additionallyinclude a heater assembly 170. The substrate support assembly 126 mayalso include a cooling base 130. The cooling base may alternately beseparate from the substrate support assembly 126. The substrate supportassembly 126 may be removably coupled to a support pedestal 125. Thesupport pedestal 125 is mounted to the chamber body 102 and may includea pedestal base 128. The support pedestal 125 may optionally include afacility plate 180. The substrate support assembly 126 may beperiodically removed from the support pedestal 125 to allow forrefurbishment of one or more components of the substrate supportassembly 126.

The facility plate 180 is configured to accommodate a plurality ofdriving mechanism configured to raise and lower a plurality of liftingpins. Additionally, the facility plate 180 is configured to accommodatethe plurality of fluid connections from the pixilated ESC 132 and thecooling base 130. The facility plate 180 is also configured toaccommodate the plurality of electrical connections from the pixilatedESC 132 and the heater assembly 170. The myriad of connections may runexternally or internally of the substrate support assembly 126 while thefacility plate 180 provides an interface for the connections to arespective terminus.

The temperature controlled cooling base 130 is coupled to a heattransfer fluid source 144. The heat transfer fluid source 144 provides aheat transfer fluid, such as a liquid, gas or combination thereof, whichis circulated through one or more conduits 160 disposed in the coolingbase 130. The fluid flowing through neighboring conduits 160 may beisolated to enabling local control of the heat transfer between thepixilated ESC 132 and different regions of the cooling base 130, whichassists in controlling the lateral temperature profile of the substrate134.

In one or more embodiments, a fluid distributor may be fluidly coupledbetween an outlet of the heat transfer fluid source 144 and thetemperature controlled cooling base 130. The fluid distributor operatesto control the amount of heat transfer fluid provided to the conduits160. The fluid distributor may be disposed outside of the processingchamber 100, within the substrate support assembly 126, within thepedestal base 128 or other suitable location.

The heater assembly 170 may include one or more main resistive heaters154 and, optionally, a plurality of secondary heaters (not shown)embedded in a body 152. The main resistive heaters 154 may be providedto elevate the temperature of the substrate support assembly 126 to atemperature for conducting chamber processes. The secondary heaters,when present, may provide localized adjustments of a couple degreesCelsius to the temperature profile of the pixilated ESC 132 generated bythe main resistive heaters 154. Thus, the main resistive heaters 154operate on a globalized macro scale while the secondary heaters operateon a localized micro scale. The main resistive heaters 154 are coupledthrough an RF filter 184 to a main heater power source 156. The powersource 156 may provide 500 watts or more power to the main resistiveheaters 154. The controller 148 may control the operation of the mainheater power source 156, which is generally set to heat the substrate134. In one or more embodiments, the main resistive heaters 154 includea plurality of laterally separated heating zones, wherein the controller148 enables one zone of the main resistive heaters 154 to bepreferentially heated relative to the main resistive heaters 154 locatedin one or more of the other zones. For example, the main resistiveheaters 154 may be arranged concentrically in a plurality of separatedheating zones to enable edge to center temperature control.

Alternately, the one or more main resistive heaters 154, and/or thesecondary heaters, may be formed in the pixilated ESC 132. In thoseembodiments where both the main resistive heaters 154 and the secondaryheaters are formed in the pixilated ESC 132, the substrate supportassembly 126 may be formed without the heater assembly 170 and thepixilated ESC 132 may be disposed directly on the cooling base 130.

The temperature of the surface for the substrate 134 in the processingchamber 100 may be influenced by the evacuation of the process gasses bythe pump, the slit valve door, the plasma 122 and other factors. Thecooling base 130, the one or more main resistive heaters 154, and thesecondary heaters all help to control the surface temperature of thesubstrate 134.

The pixilated ESC 132 has a mounting surface 131 and a workpiece surface133 opposite the mounting surface 131. The workpiece surface 133 of thepixilated ESC 132 may include gas passages (not shown) for providingbackside heat transfer gas to the interstitial space defined between thesubstrate 134 and the workpiece surface 133 of the pixilated ESC 132.The pixilated ESC 132 may also include lift pin holes for accommodatinglift pins (both not shown) for elevating the substrate 134 above theworkpiece surface 133 of the pixilated ESC 132 to facilitate robotictransfer into and out of the processing chamber 100.

The pixilated ESC 132 generally includes a dielectric body 150 havingone or more chucking electrode 136 embedded therein. The dielectric body150 may also have one or more pixel electrodes 140 embedded therein. Thepixel electrodes 140 may be coplanar with the chucking electrode 136.The pixel electrodes 140 may be interspersed with the chucking electrode136, for example the pixel electrodes 140 may be arranged in a grid orpolar array interspersed within apertures formed in as single chuckingelectrode 136, or interspersed among a plurality of chucking electrodes136.

The pixel electrodes 140 and chucking electrode 136 may be integratedinto the puck 228 directly using MEMS technology. Each pixel electrode140 may be separated from an adjacent pixel electrode 140 by thechucking electrode 136. The pixel electrodes 140 and chucking electrode136 may be formed by plating, ink jet printing, screen printing,physical vapor deposition, stamping, wire mesh or other suitable manner.

Referring back to the dielectric body 150, the dielectric body 150 mayhave a flat disk form configured to be the same as or slightly larger indiameter than the substrate. The dielectric body 150 may alternativelyhave other forms, such as rectangular, square, or other plan form. Thedielectric body 150 may be fabricated from a ceramic material, such asAlN or Al₂O₃. When fabricated from a ceramic material, the dielectricbody 150 may be referred to as a puck (shown as puck 228 in FIG. 2).Alternately, the dielectric body 150 may be fabricated from a polymer,such as polyimide, polyetheretherketone, polyaryletherketone and thelike. When fabricated from a polymer, the dielectric body 150 may bereferred to as a flex stack.

The body 150 of the pixilated ESC 132 may be formed from two or morelayers heated under pressure to form a single mass for the body 150. Forexample, the body 152 may be formed from polyimide layers with the pixelelectrodes 140 and the chucking electrodes 136 thereon or therebetween.In some embodiments, main resistive heaters 154 may be formed on orbetween the polyimide layers as well. Alternately, the pixilated ESC 132may be formed from a ceramic material. The pixilated ESC 132 may besintered and include one or more chucking electrodes 136 and pixelelectrodes 140 embedded therein.

The chucking electrode 136 may be configured as a bipolar electrode, orother suitable arrangement. The chucking electrode 136 is coupledthrough an RF filter 182 to a chucking power source 138 which provides aRF or DC power to electrostatically secure the substrate 134 to theupper surface of the pixilated ESC 132. The RF filter 182 prevents RFpower utilized to form a plasma 122 within the processing chamber 100from damaging electrical equipment or presenting an electrical hazardoutside the chamber. In one embodiment, the chucking power source 138provides a high voltage to one or more chucking electrodes 136.

The plurality of pixel electrodes 140 may be disposed in the pixilatedESC 132 and arranged in close proximity to the chucking electrodes 136.The pixel electrodes 140 are coupled through pixel capacitors (shown inFIGS. 4 and 5) to a ground 142 via electrical leads 146. The pixelcapacitors may be configured to have a fixed or variable capacitance,wherein the value of each pixel capacitor is selected to independentlyand locally control the RF coupling across many discrete regions of thepixilated ESC 132 to enable local, lateral and/or azimuthal tuning ofpower coupling between the substrates and ESC 132, which in turn enableslocal, lateral and/or azimuthal process results to be tuned in the etchprocessing chamber 100.

In one or more embodiments, the pixel capacitors may be variablecapacitors whose capacitance may be changed mechanically orelectronically. A pixel controller 210 may be utilized to control thecapacitance of the pixel capacitors. The change in capacitance of thepixel capacitors may be utilized to affect the affinity of the couplingof power between the chucking electrode 136 through the substrate 134 tothe ground 142 through the one or more pixel electrodes 140, wherebyelectrostatically chucking the substrate 134 to the pixilated ESC 132.

The pixel capacitors, together with resistors, inductors and memristors,belong to the group of “passive components” for electronic equipmentutilized to deliver the chucking power while allowing tunable control ofthe processing results. The pixel capacitors may have fixed capacitancevalues and/or variable capacitors with variable (trimmer) or adjustable(tunable) capacitance values. The pixel capacitors may be a digitallytuned capacitor, such as an integrated circuit (IC) variable capacitor,whose capacitance may be controlled by the pixel controller 210. Thecapacitance values of the pixel capacitors may be configured to tune theRF signal to control an etch rate in the etch processing chamber 100.

In one or more embodiments, the pixel capacitors may be fabricated assolid state field-effect transistor (FET) switches. The pixel capacitorsmay be a microelectromechanical system (MEMS), barium strontium titanate(BST) based device, silicon-on-insulator (SOI) baseddevice/silicon-on-sapphire (SOS) based device, ferroelectric baseddevice, or other suitable device technology. MEMS devices are highlylinear, and therefore are suitable for antenna aperture tuning, dynamicimpedance matching, power amplifier load matching and adjustablefilters. BST devices vary the capacitance by applying high voltage tothe device. The tuning accuracy is limited only by the accuracy of theD-A converter circuitry that generates the high voltage. The BST deviceshave good stability over varying temperatures and linearity in demandingapplications. SOI/SOS tuning devices use metal-insulator-metal (MIM)caps arranged in binary-weighted values to achieve different capacitancevalues. SOI/SOS switches have high linearity and are well suited to lowpower applications where high voltages are not present. High voltageendurance requires multiple FET devices in series which adds seriesresistance and lowers the quality factor. In one embodiment, the pixelelectrodes 140 are digitally tuned variable MEMS devices.

Plasma based processes can be very sensitive to small local radiofrequency (RF) coupling variations to an ESC. The pixilated ESC 132allows surface capacitance to be controlled as to provide angstrom-levelCD control of the etch rate at discrete locations across the lateralprofile of the substrate 134.

FIG. 2 is a partial cross-sectional schematic view illustrating portionsof the substrate support assembly 126. Included in FIG. 2 are portionsof the pixilated ESC 132, the heater assembly 170, the cooling base 130,and the facility plate 180.

The heater assembly 170 may be optional and have an insulated region264. The insulated region 264 may protect the heater assembly 170 fromthe electrical leads 146 connecting the pixel electrodes 140 to theground 142 through the pixel capacitors and the pixel controller 210.Embodiments in which the main resistive heaters 154 are in the pixilatedESC 132, the heater assembly 170 may be absent from the substratesupport assembly 126.

The heater assembly 170 may be coupled to the mounting surface 131 ofthe pixilated ESC 132 utilizing a bonding agent 244. The bonding agent244 may be an adhesive, such as an acrylic-based adhesive, an epoxy, asilicon based adhesive, a neoprene-based adhesive or other suitableadhesive. In one embodiment, the bonding agent 244 is an epoxy. Thebonding agent 244 may have a coefficient of thermal conductivityselected in a range from 0.01 to 200 W/mK and, in one exemplaryembodiment, in a range from 0.1 to 10 W/mK. The adhesive materialscomprising the bonding agent 244 may additionally include at least onethermally conductive ceramic filler, e.g., aluminum oxide (Al₂O₃),aluminum nitride (AlN), and titanium diboride (TiB₂), and the like. Thebonding agent 244 may be removed when refurbishing the pixilated ESC 132or the heater assembly 170. In other embodiments, the pixilated ESC 132is removably coupled to the heater assembly 170 utilizing fasteners orclamps (not shown).

The body 150 of the pixilated ESC 132 may generally be cylindrical inplan form, but may also be formed in other geometrical shapes. The body150 may be ceramic and sintered into the puck 228 illustrated in FIG. 2.The puck 228 has a workpiece surface 133 to support the substrate 134thereon. The body 150 may additionally include a mounting surface 131facing the heater assembly 170.

The portion of the puck 228 disposed between the electrodes 136, 140 anda top surface of the substrate 134 form a dielectric 226 forcapacitively coupling the power to the substrate 134. More power coupledto the substrate 134, resulting from a thicker depth of the dielectric226, or a flatter topography for the puck 228, can lower the etch rate,and vice versa. The coupling of power to the substrate 134 plays animportant role in forming semiconductor technology nodes smaller than 10nm as temperature uniformity even as low as 0.25° Celsius is notsufficient in maintaining good lateral etch uniformity. Accordingly, ithas been found that independent control of the power coupling betweenthe substrate 134 and the pixilated ESC 132 at discrete locationslaterally across the pixilated ESC 132 allows the etch rate to beindependently controlled at each location of the pixilated ESC 132associated with one of the pixel electrodes 140 and its surroundingchucking electrode 136.

A conventional ESC may have different capacitance at discreet locationsbetween the substrate and the chucking electrodes depending on the ESCdesign and material used. For example, the capacitance between aperfectly flat wafer and the conventional ESC which is perfectly flatmay be about 220 pF. Considering variation in the puck surface flatnessand roughness, and other factors such as the dielectric depth, distanceof chucking electrode from ESC surface, and material of the puck, amongother factors, the capacitance can be much higher in one region of theESC as compared to other regions. For example, some conventional ESCsmay have a variance in capacitance across the substrate supportingsurface of about several thousand pico-faradays.

Embodiments of the pixilated ESC 132 described herein allow control ofthe etch rate uniformity to within about 5 Å by controlling the localcapacitance variation across the substrate support surface of thepixilated ESC 132 to less than 10%. For example, the local capacitancevariation across the substrate support surface of the pixilated ESC 132may be controlled to between about 20 pF to about several hundredpico-faradays.

In one or more embodiments, the local capacitance variation across thesubstrate support surface of the pixilated ESC 132 may be controlled bysufficiently tightening the tolerance for the depth of the dielectric226 in order to achieve a capacitance variation of less than 10%. Forexample, the tolerance for the depth of the dielectric 226 may betightened to less than about 5%, if the other 5% is related to dopingvariations, to achieve a capacitance variation of less than 10%.

In addition to, or in the alternative of tightening the tolerance forthe depth of the dielectric 226, the local capacitance variation acrossthe substrate support surface of the pixilated ESC 132 may be controlledby sufficiently improving the flatness and topographical uniformity ofthe surface for the puck 228. For example, the tolerance of the flatnessof the puck 228 may be less than about 10 μm. In addition to, or in thealternative to improving the flatness of the puck 228, the surfaceroughness variation of the puck 228 may be less than about 10 μm.

In addition to, or in the alternative of improving one or more of thephysical attributes (i.e., depth tolerance, flatness, roughness, and thelike) of the dielectric 226 and puck 228, the local capacitancevariation across the substrate support surface of the pixilated ESC 132may be controlled by selecting an appropriate capacitance for each ofthe pixel capacitors coupled to the individual pixel electrodes 140. Byselecting an appropriate capacitance for each of the pixel capacitorscoupled to the individual pixel electrodes 140, variation of thephysical attributes of the dielectric 226 and puck 228, or variation inthe processing environment, may be compensated to achieve desiredprocessing results, such as maintaining etch rate uniformity to withinabout 5 Å.

The pixel controller 210 may be utilized to select an appropriatecapacitance for each of the pixel capacitors coupled to the individualpixel electrodes 140. For example, the pixel controller 210 may controlthe capacitance of each the pixel capacitor utilizing control signalsgenerated by the pixel controller 210.

The use of independently controllable pixel capacitors to smooth out orcorrect the power coupling profile of the pixilated ESC 132 enablecontrol of the local RF uniformity across the substrate 134 to verysmall tolerances. The local RF uniformity across the substrate 134enables precise process and CD control when processing the substrate134. Additionally, the small size and high density of the pixelelectrodes 140 enable discreet local control of power coupling between asingle pixel electrode 140 and the adjacent chucking electrode 136through the substrate 134 without substantially affecting the powercoupling of neighboring regions of the pixilated ESC 132, therebyallowing local control of the power coupling. The substrate supportassembly 126, having a plurality of pixel electrodes 140, hasdemonstrated the ability to control the capacitance uniformity of thesubstrate 134 processed thereon to less than about 10%, resulting incontrol of process deviations in etch uniformity down to about 5 Å.

FIG. 3 is a partial top plan cross sectional view of the pixilated ESC132 taken along the section line A-A of FIG. 2. The layout of the pixelelectrodes 140 and chucking electrodes 136 in the pixilated ESC 132 isprovided by way of example, and arranged in alternative manners. Thepixel electrodes 140 are disposed along the plane of the cross sectionline A-A through the pixilated ESC 132 in FIG. 2. The number of pixelelectrodes 140 and chucking electrodes 136 shown are for illustrationonly, and any number of embodiments may have substantially more (orless) pixel electrodes 140 and chucking electrodes 136. Additionally,the chucking electrodes 136 may be in the form of independently biasablesegments, as a plurality of commonly biased segments, or otherconfiguration. The local capacitance across the workpiece supportingsurface of the pixilated ESC 132 can be controlled by the pixelcapacitors to provide Angstrom-level control of the etch rate.

The pixel controller, such as the pixel controller 210 shown in FIG. 2,may control each pixel capacitor. In one embodiment, the pixelcapacitors and switches for coupling pixel capacitors to selected pixelelectrodes 140 are disposed in the pixel controller 210. The pixelcontroller 210 may couple a single pixel electrode 140 to a capacitorhaving the same or different capacitance as neighboring pixel electrodes140. In other embodiments, the pixel controller 210 may couple a groupof adjacent pixel electrodes 140 to capacitors having the samecapacitance, which may be the same or different than the capacitance ofneighboring groups of pixel electrodes 140, thereby defining a portionor a zone of the pixilated ESC 132 which may be controlled independentlyfrom other zones. The pixel controller 210 may couple a plurality ofpixel electrodes 140 grouped to define an inner wedge, a perimetergroup, a pie shaped area, or other desired geometric configuration,including non-contiguous configurations. Thus, by controlling the localcapacitance of each pixel electrode 140, RF coupling can be preciselycontrolled at independent locations along the surface of the pixilatedESC 132 which enables more precise control of substrate processingresults. Although the pattern shown for the pixel electrodes 140 isarranged as a grid of small units, the pattern may alternatively havelarger and/or smaller units, extending to the edge, or in otherarrangements.

The number of pixel electrodes 140 may be substantially equal to thenumber of chucking electrodes 136. Alternately, the number of pixelelectrodes 140 may substantially exceed or be less than the number ofchucking electrodes 136. The number of pixel electrodes 140 locatedacross the substrate support assembly 126 may easily be in excess ofseveral hundred. In one embodiment, there is a corresponding pixelelectrode 140 for each chucking electrode 136. In an alternateembodiment, there are corresponding groups of pixel electrodes 140 forone or more chucking electrode.

The pixel electrodes 140 may be configured in a pattern to efficientlygenerate a desired RF coupling profile between the substrate and theground. The pattern may be grid (as shown) symmetric about a midpoint,or other suitable pattern which provides clearance in and around holesfor lift pins or other mechanical, fluid or electrical connections andports (not shown).

FIG. 4 is a cross-sectional view of the pixilated ESC 132 taken alongthe section line B-B of FIG. 3. FIG. 4 illustrates a simplifiedexemplary wiring schematic for capacitors coupled to the pixelelectrodes 140 in the pixilated ESC 132. The pixilated ESC 132 in FIG. 4shows the pixel electrodes 140 and the chucking electrodes 136 formedtherein. The pixel electrodes 140 are coupled to one or more capacitors440, for example, residing in a capacitor bank 410. The capacitor bank410 may be deposed in the pixel controller 210 or other suitablelocation. The capacitors 440 may have a fixed or variable capacitance.In embodiments wherein the capacitance is variable, the capacitance ofthe capacitor 440 may be selected in response to a signal from the pixelcontroller 210.

The pixel controller 210 may have a controller 412 for opening and/orclosing individual circuits that selectively couple capacitors 440 torespective pixel electrodes 140 via electrical leads 141. When thecircuits of the pixel controller 210 are in a closed position, the pixelelectrode 140 is coupled through at least one of the capacitors 440 toground 142. In one embodiment, the controller 412 may connect the pixelelectrode 140F and capacitor 440F via the electrical lead 141F to ground142, while one or more of the other capacitors 440 are floating withrespect to ground 142 (as those circuits are in an open state). In thisconfiguration, the area of the pixilated ESC 132 local to the pixelelectrode 140F may have stronger coupling of the RF then, for examplethe area of the pixilated ESC 132 local to the electrode 140G. Thecontroller 412 may control the duration or duty cycle for which thepixel electrode 140F and capacitor 440F are to ground 142 or in afloating state relative to ground. The controller 412 may additionallycontrol the duration or duty cycle for which the other pixel electrodes140 and capacitors 440 are to ground 142 or in a floating state relativeto ground relative to the pixel electrode 140F or other pixel electrode140. In this manner, the relative capacitance at each location acrossthe substrate support surface of the pixilated ESC 132 may be controlledover time, thereby allowing control of the local RF coupling and,accordingly, enabling local processing results to be tailored asdesired.

In another embodiment in addition to or in the alternative tocontrolling the duty cycle and duration of the relative connectionsbetween the pixel electrodes 140 and ground, the controller 412 mayprogrammatically vary the capacitance for each capacitor 440 such thatthe relative capacitance at each location across the substrate supportsurface of the pixilated ESC 132 may be controlled. The number anddensity of the pixel electrodes 140 contribute to the ability forcontrolling the uniformity of the RF coupling across the substrate 134to very small tolerances. Thus, individual control of the capacitancebetween each pixel electrode 140 and ground relative to another pixelelectrode 140 enables local and lateral control of RF coupling atspecific locations between the substrate 134 and pixilated ESC 132,which, in turn, enables precise process and CD control while processingthe substrate 134.

FIG. 5 illustrates one embodiment of a partial wiring schematic for avariable capacitor 500 for coupling a pixel electrode 140 to ground 142.The variable capacitor 500 may be utilized in the pixel controller 210described above between any of the pixel electrodes 140 and ground 142,for example by replacing the capacitor 440 shown in FIG. 4. The variablecapacitor 500 may include a mix of variable capacitors 505 and fixedcapacitors 570, coupled through decoupling resistors 506 to a thin-filmtransistor 508 (TFT). The variable capacitor 500 general functions as avoltage controlled variable capacitor (varactor), and may utilized theMEMs control elements as the variable capacitors 505. The variablecapacitor 500 includes branches 510, 520, 530, 540, 550, 560, where eachbranch includes at least one variable capacitor 505 and at least onefixed capacitor 570.

The variable capacitors 505, when configured as MEMs control elements,are binary (on/off) controlled, i.e. switchable. The variable capacitors505 may provide between about 0 pF to about 3.4 pF of capacitance to thevariable capacitor 500. Each fixed capacitor 570 may provide betweenabout 0.5 pF to about 74 pF of total capacitance to the variablecapacitor 500. Additionally, the decoupling resistors 506, disposedbetween the TFT 508 and the capacitors 505, 570, may individuallyprovide about 5 ohms of resistance.

The capacitance to the variable capacitor 500 may be configured withselectable binary weighted capacitance along one or more branches 510,520, 530, 540, 550, 560 comprising the variable capacitor 500. The TFT508 may be used to select which one or more of the branches 510, 520,530, 540, 550, 560 are floating, and which one or more the branches 510,520, 530, 540, 550, 560 couple the pixel electrode 140 to ground 142.

The total capacitance for each branch 510, 520, 530, 540, 550, 560 isthe combination of the two sets of capacitors, i.e. the variablecapacitor 505 and the fixed capacitor 570. Each branch 510, 520, 530,540, 550, 560 may have the same range of capacitance or differentcapacitances. For example, the branch 560 may be configured the largesttotal capacitance, with the branch 550 configured the next largest totalcapacitance, and so on with the branch 510 having the smallest totalcapacitance. Branch 560 may consist of six switchable variablecapacitors 505 each having a capacitance set to about 3.4 pF for a totalof about 20.4 pF, and be arranged in parallel with the fixed capacitor576 having a capacitance of about 74 pF. This yields 16 pF of totalcapacitance for the branch 560. The branches 550, 540, 530, 520, 510 aresimilarly constructed, and may have 8, 4, 2, 1, and 0.5 pF totalcapacitance respectively. The branches 530, 520, 510 having a totalcapacitance of less than 3.4 pF may use a single MEMs variable capacitor505 in parallel or series with a single fixed capacitor 570. The fixedcapacitor 570 may be configured to reduce the total capacitance for thebranches 530, 520, 510 to the desired value. For example, the smallestbranch 510 may have a single variable capacitor 505 in parallel with afixed capacitor 570 of about 0.6 pF. Thus, the smallest branch 510 mayhave an effective capacitance of 0.5 pF when the variable capacitor 505is actuated, i.e. switched on. Therefore, by selectively switching thevariable capacitors 505 on/off in the various branches 510, 520, 530,540, 550, 560, a total capacitance of between about 0.5 pF to about 31.5pF may be obtained.

Alternately, the fixed capacitors 576 may be in series with the RF MEMscapacitor cells, such as the MEMs variable capacitor 505. One or moreinline capacitors may connect in series to the pixel electrode 140. Insuch a configuration, the capacitors 576, 505 may be subject to highervoltages than in configurations where the capacitors 576, 505 are placedin parallel. Thus, a series configuration for the RF MEMs capacitorcells, such as the MEMs variable capacitor 505, may be configured forhandling high voltages.

FIG. 6 is a flow diagram of one embodiment for a method 600 forprocessing a substrate utilizing a pixilated electrostatic chuck, suchas the pixilated electrostatic chuck described above, among others. Themethod 600 begins at block 602 by applying power to a main electrodeformed in the pixilated electrostatic chuck. The main electrode may be asingle electrode, or segmented into zones. The zones of the mainelectrode in the pixilated electrostatic chuck may be independentlycontrollable.

At block 604, one or more of the plurality of pixel electrodesdistributed laterally within the pixilated electrostatic chuck areselectively coupled to ground, effectively chucking that substrate tothe surface of the electrostatic chuck. The duration and/or duty cycleof the coupling of each pixel electrode to ground may be controlledrelative to the other pixel electrodes disposed within the pixilatedelectrostatic chuck to control the RF coupling to a substrate disposedon the electrostatic chuck. In some embodiments, the coupling of eachpixel electrode to ground may be sequentially scanned across thepixilated electrostatic chuck. In other embodiments, the capacitancebetween a single pixel electrode to ground may be controllably selectedrelative to the ground paths of the other pixel electrodes disposedwithin the pixilated electrostatic chuck, optionally in addition toduration and/or duty cycle of the coupling of each pixel electrode toground. By tailoring the local capacitance between the pixel electrodeand ground, the local, lateral, and/or azimuthal tuning of processingresults cross the substrate may be realized.

At block 606, the substrate may be processed on the pixilatedelectrostatic chuck. For example, the substrate may be processed in avacuum chamber, for example using a plasma process. The vacuum process,which may be optionally performed in the presence of a plasma within theprocessing chamber, may be one of etching, chemical vapor deposition,physical vapor deposition, ion implantation, plasma treating, annealing,oxide removal, abatement or other plasma process. It is contemplatedthat the workpiece may be processed on the RF controlled surface of thepixilated electrostatic chuck in other environments, for example, atatmospheric conditions, for other applications. In one embodiment, thesubstrate on the pixilated electrostatic chuck is etched to form sub 10nm semiconductor technology nodes.

Optionally, at block 606, coupling between one or more of the pluralityof pixel electrodes distributed laterally within the pixilatedelectrostatic chuck and ground may be changed in response to a change inprocess conditions or a change in a process recipe. For example, thecapacitance between one or more of the pixel electrodes and ground maybe changed utilizing commands from the pixel controller 210 in responsea change in process conditions or a change in a process recipe. Inanother example, coupling of one or more of the pixel electrodes may beswitched between floating and ground utilizing commands from the pixelcontroller 210 in response a change in process conditions or a change ina process recipe.

While the foregoing is directed to implementations of the presentinvention, other and further implementations of the invention may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

We claim:
 1. A pixilated electrostatic chuck (ESC), comprising: adielectric body having a workpiece support surface configured to accepta substrate thereon; one or more chucking electrodes disposed in thepixilated ESC; and a plurality of pixel electrodes switchable between afloating state and a grounded state, having variable capacitance toground, or both, the pixel electrodes and chucking electrodes forming acircuit operable to electrostatically chuck the substrate to theworkpiece support surface.
 2. The pixilated ESC of claim 1 furthercomprising: a bank of capacitors coupled between the pixel electrodesand ground.
 3. The pixilated ESC of claim 1, wherein at least one of thecapacitors is a MEMS capacitor.
 4. The pixilated ESC of claim 3, whereinthe capacitors are about 3.2 mm×3.2 mm×0.53 mm or smaller.
 5. Thepixilated ESC of claim 1, wherein chucking electrodes are arranged in agrid.
 6. The pixilated ESC of claim 1, wherein the capacitors areintegrated into the body.
 7. The pixilated ESC of claim 1, wherein thepixel capacitors are RF variable capacitors.
 8. The pixilated ESC ofclaim 1, wherein the capacitors have a capacitance uniformity across thebody that is less than about 10%.
 9. The pixilated ESC of claim 1,wherein capacitors are disposed in the pixilated ESC.
 10. The pixilatedESC of claim 1, wherein the capacitance between at least one of thepixel electrode and ground is about 20 pF.
 11. A processing chambercomprising: chamber body; a pixilated electrostatic chuck (ESC) disposedin the chamber body, the pixilated ESC comprising: a dielectric bodyhaving a workpiece support surface configured to accept a substratethereon; one or more chucking electrodes disposed in the pixilated ESC;and a plurality of pixel electrodes switchable between a floating stateand a grounded state, having variable capacitance to ground, or both,the pixel electrodes and chucking electrodes forming a circuit operableto electrostatically chuck the substrate to the workpiece supportsurface.
 12. The processing chamber of claim 11 further comprising: abank of capacitors coupled between the pixel electrodes and ground. 13.The processing chamber of claim 11, wherein at least one of thecapacitors is a MEMS capacitor.
 14. The pixilated ESC of claim 11,wherein the processing chamber is an etch chamber, a deposition chamber,or an ion implant chamber.
 15. The processing chamber of claim 11,wherein chucking electrodes are arranged in a grid.
 16. The processingchamber of claim 11, wherein the pixel capacitors are RF variablecapacitors.
 17. A method for processing a substrate, comprising:applying power to a main chucking electrode formed in a pixilatedelectrostatic chuck; selectively coupling one or more of a plurality ofpixel electrodes distributed laterally within the pixilatedelectrostatic chuck to ground to secure a substrate to the pixilatedelectrostatic chuck; and processing the substrate on the pixilatedelectrostatic chuck.
 18. The method of claim 17, further comprising:controlling at least one of a duration and duty cycle of the coupling ofeach pixel electrode to ground relative to the other pixel electrodesdisposed within pixilated electrostatic chuck.
 19. The method of claim17, further comprising: controlling a capacitance between at least onepixel electrode and ground relative to the other pixel electrodesdisposed within pixilated electrostatic chuck.
 20. The method of claim17, further comprising: changing a coupling between one or more of theplurality of pixel electrodes distributed laterally within the pixilatedelectrostatic chuck and ground in response to a change in a processcondition or a change in a process recipe.